‘? _ BYv26A, BYv26B, BYV26C, BYv26D, BYV26E7 WWw'V'Shay'C°m Vishay Semiconductors
ELEcTRIcAL cHARAcTEnIsTIcs (ramb 25 0C. unless othenvise specified)
FOnNa,d Voltage m|F:1A,T]:175°C22
Revese Current
VR : VRRM, TJ : 150 °C ‘MENE! IlllReverse breakdown voltage In : 100 uA nIlllIlllIIHIIIHIIIHIIIHIIIHI
BYV26 B
Reverse recovew time IF : 0.5 A, IR : 1 A, iR : 0.25 A
ImmlIlllIlllInulInulIlll
TYPICAL cHAnAcTEnIsTIcs (Tamb = 25 cc, unless otherwise specified)
600
12
mu 1 0
400 0 EI
SUD 0 6
200 04
mo 02
iFAV - Average Fonlvard Current (A)
PR - Max, Reverse Power Dissipation (mW)
00 40 so i20 160 200
959728 T] — Junction Temperature (“C) 959730 Tamb - Ambient Temperature (“Ci
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Fom/ard Current vs. Ambient Temperature
in - Reverse Current (|.iA)
iF - Forward Current (A)
959729 T] _ Junction Temperature (ea) 95973. VF _ Fonlvard voltage (V)
Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Reverse Current vs. Junction Temperature
Rev. 1.8, 04-Sep-12 2 Document Number: 86040
For technical questions within your region: DiodesAmericas@vishay.corn, DiodesAsie@vishav_corn, DiogesEurope@vishay_com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www_vishay.com/dge?91mm
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