| ‘? _ BYv26A, BYv26B, BYV26C, BYv26D, BYV26E7 WWw'V'Shay'C°m Vishay Semiconductors ELEcTRIcAL cHARAcTEnIsTIcs (ramb 25 0C. unless othenvise specified) FOnNa,d Voltage m|F:1A,T]:175°C22 Revese Current VR : VRRM, TJ : 150 °C ‘MENE! IlllReverse breakdown voltage In : 100 uA nIlllIlllIIHIIIHIIIHIIIHIIIHI BYV26 B Reverse recovew time IF : 0.5 A, IR : 1 A, iR : 0.25 A ImmlIlllIlllInulInulIlll TYPICAL cHAnAcTEnIsTIcs (Tamb = 25 cc, unless otherwise specified) 600 12 mu 1 0 400 0 EI SUD 0 6 200 04 mo 02 iFAV - Average Fonlvard Current (A) PR - Max, Reverse Power Dissipation (mW) 00 40 so i20 160 200 959728 T] — Junction Temperature (“C) 959730 Tamb - Ambient Temperature (“Ci Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Max. Average Fom/ard Current vs. Ambient Temperature in - Reverse Current (|.iA) iF - Forward Current (A) 959729 T] _ Junction Temperature (ea) 95973. VF _ Fonlvard voltage (V) Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Reverse Current vs. Junction Temperature Rev. 1.8, 04-Sep-12 2 Document Number: 86040 For technical questions within your region: DiodesAmericas@vishay.corn, DiodesAsie@vishav_corn, DiogesEurope@vishay_com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www_vishay.com/dge?91mm |